| PART |
Description |
Maker |
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| 2SB601 2SB601-Z 2SB601-S 2SB601L 2SB601M 2SB601K |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| 2N6648 2N6649 2N6650 JAN2N6650 JANTX2N6650 JANTXV2 |
PNP Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
Microsemi Corporation
|
| 2N6298 JANTX2N6298 JANTX2N6299 JAN2N6298 JAN2N6299 |
PNP Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| AP1149 AP1148 2N6590 2N6589 2N6585 2N6587 AP1003 A |
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 15A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 15A I(C) | TO-3
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管|叩| 450V五（巴西）总裁| 10A条一（c）|10AC
TRANSISTOR | BJT | PNP | 450V V(BR)CEO | 15A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 15A I(C) | TO-3
|
Cypress Semiconductor, Corp.
|
| 2SA1714 2SA1714K 2SA1714L 2SA1714M |
PNP high-speed switching darlington transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING 进步党硅外延功率晶体管（达林顿连接笔记本高）高速开
|
NEC Corp.
NEC, Corp.
|
| 2SD1794 |
Darlington Transistor(10A NPN)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| CZTA14 CZTA64 |
SMD Small Signal Transistor NPN Darlington
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| 2SB1008 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-126
Low Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor
|
Rohm CO.,LTD.
ROHM Electronics
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| BSR62 BSR62_4 |
PNP Darlington transistor 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
From old datasheet system
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
