| PART |
Description |
Maker |
| 2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
|
| 2SA1425 2SA1425Y |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| CJD42CPNP CJD41C CJD41CNPN CJD42C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| 2SD2387 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications
|
TOSHIBA
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| 2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1804 E000563 |
TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
From old datasheet system
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) 晶体管（功率放大器应用）
|
TOSHIBA[Toshiba Semiconductor]
AVX, Corp.
|
| 2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBO闪光，中等功率放大器应用
TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| SAP16NY SAP16NO SAP16N |
Darlington Transistor For Audio Amplifier With Temperature Compensation
15 A, 160 V, NPN, Si, POWER TRANSISTOR
|
SANKEN ELECTRIC CO LTD
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 2SC3624 2SC3624A 2SC3624A-T1B 2SC3624-T1B 2SC3624A |
BJT 双极型晶体管
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
AUDIO FREQUENCY AMPLIFIER/ SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC, Corp.
NEC[NEC]
|
