| PART |
Description |
Maker |
| 1N6639US 1N6639 1N6641US 1N6641 1N6640US 1N6640 |
300 mAmp 75-100 Volts 4 nsec Computer Switching Diode 0.3 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| JANS1N6641US 1N6639US 1N6640US 1N6641US JAN1N6639U |
Signal or Computer Diode
SWITCHING DIODES
|
MICROSEMI[Microsemi Corporation]
|
| JANS1N6643US 1N6638U 1N6638US 1N6642U 1N6642US 1N6 |
SWITCHING DIODES 0.3 A, SILICON, SIGNAL DIODE
Signal or Computer Diode
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SC4667 E000971 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING COMPUTER COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1N4149 1N4449 1N4450 1N4447 1N914 1N4454 1N4150 1N |
VC-MP-K4
Signal or Computer Diode
Silicon Epitaxial Planar Diodes
SMALL SIGNAL SWITCHING DIODE
SILICON EPITAXIAL PLANAR DIODE
|
SEMTECH[Semtech Corporation]
Microsemi
Honey Technology
Chenyi Electronics
|
| JAN1N4153UR-1 JAN1N3070 |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 2; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.81; IR (µA): 0.05; 0.15 A, SILICON, SIGNAL DIODE, DO-213AA
Signal or Computer Diode; Package: DO-7; IO (A): 0.1; IFSM (A): 2; Cj (pF): 5; Vrwm (V): 175; trr (nsec): 50; VF (V): 1; IR (µA): 0.1; 0.1 A, SILICON, SIGNAL DIODE, DO-7
|
Microsemi, Corp.
|
| ESA1N4148-1 |
Signal or Computer Diode
|
Microsemi
|
| JANTX1N486B JAN1N486B JANTX1N485B JAN1N485B |
Signal or Computer Diode
|
Microsemi
|
| JANTX1N6640US |
Signal or Computer Diode
|
Microsemi
|
| 1N4148UBD |
Signal or Computer Diode
|
Microsemi
|
