| PART |
Description |
Maker |
| M5M51016BRT-10LL M5M51016BRT-10L D98007 M5M51016BT |
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
From old datasheet system
1048576-BIT(65536-16-1048576-BIT(65536-WORD WORDBY BY16-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI |
1048576-bit (131072-word by 8-bit) CMOS static RAM
From old datasheet system
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
| M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
From old datasheet system
|
Mitsubishi
|
| MR27V802D |
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M5M44405CJ M5M44405CJ-5 M5M44405CJ-5S M5M44405CJ-6 |
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M564R16DJ-10 M5M564R16DJ-12 M5M564R16DJ-15 M5M56 |
From old datasheet system
1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静态RAM
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 1048576位（65536字由16位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M4V4405CJ M5M4V4405CTP-6 M5M4V4405CTP-6S M5M4V44 |
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (1048576-WORD BY 4-BIT) DYNAMIC RAM
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HM5118160BJ-8 HM5118160BLJ-8 |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi,Ltd.
|
