PART |
Description |
Maker |
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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MOTOROLA[Motorola, Inc] ON Semiconductor
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MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
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ON Semiconductor
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MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
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ON Semiconductor Motorola, Inc
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MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 1000 VOLTS
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ON Semiconductor
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MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
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MOTOROLA[Motorola, Inc] Motorola, Inc.
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MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
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IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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Motorola, Inc. ON Semiconductor
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MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
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ETC Motorola, Inc ON Semiconductor
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MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP75N06HD MTP75N06HD_D ON2646 |
From old datasheet system TMOS POWER FET 75 AMPERES 50 VOLTS TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS
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ON Semiconductor Motorola, Inc
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