| PART |
Description |
Maker |
| PTB20188 |
4 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor
|
ERICSSON[Ericsson]
|
| MRF372 |
MRF372 470-860 MHz, 180 W, 32 V Lateral N-Channel RF Power MOSFET
|
Motorola
|
| MRF377R5 MRF377R3 MRF377 |
MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| CGY887B CGY887B_1 CGY887B-2015 |
860 MHz/ 27.8 dB gain push-pull amplifier
From old datasheet system
860 MHz, 27.8 dB gain push-pull amplifier
|
Quanzhou Jinmei Electronic ...
NXP Semiconductors
Philips Semiconductors
|
| M68710UH 68710UH |
From old datasheet system
470-520MHz 6V 2W FM PORTABLE RADIO
470-520MHz, 6V, 2W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BGD804 BGD804112 |
860 MHz, 20 dB gain power
|
NXP Semiconductors N.V.
Philips
|
| BGD906MI BGD906 |
860 MHz, 21.5 dB gain power doubler amplifier
|
Philips
|
| BGD814 BGD81401 |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| BGD904 BGD904MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
