| PART |
Description |
Maker |
| MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| MIG400J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| MG50Q2YS91 |
GTR Module Silicon N-Channel IGBT
|
Toshiba
|
| BSM25GD100 BSM25GD100D C67076-A2501-A2 |
IGBT MODULE 25 A, 1000 V, N-CHANNEL IGBT
IGBT MODULE IGBT模块
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| GP1600FSS12 |
Powerline N-Channel Single Switch IGBT Module Advance Information 2100 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
