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K9F1G08Q0M-PCB0 - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 1Gb Gb 1.8V NAND Flash Errata

K9F1G08Q0M-PCB0_192825.PDF Datasheet


Part No.	K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PCB0 K9F1G08U0M-PIB0 K9F1G08U0M-VCB0 K9F1G08U0M-VIB0 K9F1G08U0M-YCB0 K9F1G08U0M-YIB0 K9F1G16Q0M K9F1G16Q0M-PCB0 K9F1G16Q0M-PIB0 K9F1G16Q0M-YCB0 K9F1G16Q0M-YIB0 K9F1G16U0M-PCB0 K9F1G16U0M-PIB0 K9F1G16U0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0A
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 1Gb Gb 1.8V NAND Flash Errata
File Size	712.11K / 38 Page
Maker	Samsung Electronic SAMSUNG[Samsung semiconductor]
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 1Gb Gb 1.8V NAND Flash Errata

Product Description search : 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 1Gb Gb 1.8V NAND Flash Errata

Related Part Number

PART	Description	Maker
K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory	Samsung Electronic SAMSUNG[Samsung semiconductor]
MC-4R128FKE6D-845 MC-4R128FKE6D MC-4R128FKE6D-653	Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)	ELPIDA[Elpida Memory]
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UPD46128512-E10X UPD46128512-E11X UPD46128512-E12X	128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION	NEC
MB82DP04184E-65LTBG	64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory	Fujitsu Component Limited.
M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP	From old datasheet system 4-BANK x 2097152-WORD x 8-BIT 64M bit Synchronous DRAM	MITSUBISHI[Mitsubishi Electric Semiconductor]
K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M-	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory	Samsung Electronic SAMSUNG[Samsung semiconductor]
K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory	Samsung Electronic SAMSUNG[Samsung semiconductor]
UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2	64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范	NEC Corp. PerkinElmer, Inc.
K9F1208U0A-P K9F1216D0A K9F1216D0A-P K9F1216D0A-Y	64M x 8 Bit , 32M x 16 Bit NAND Flash Memory	Samsung Electronic SAMSUNG[Samsung semiconductor]
K9F1208U0A K9F1216U0A	64M x 8 Bit , 32M x 16 Bit NAND Flash Memory	SAMSUNG[Samsung semiconductor]

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