PART |
Description |
Maker |
K7Q161862 K7Q161862B K7Q163662B |
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7Q163664B10 K7Q161864B |
512Kx36 & 1Mx18 QDRTM b4 SRAM
|
Samsung semiconductor
|
K7Q163682A K7Q161882 K7Q161882A |
512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36 512Kx36 & 1Mx18 QDR b2 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7D163674B-HC30 K7D163674B-HC27 K7D163674B-HC33 K7 |
512Kx36 & 1Mx18 SRAM
|
Samsung semiconductor http://
|
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
K7B163635B |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung Electronics
|
K7Q163664B-FC16 K7Q161864B-FC16 |
512Kx36 & 1Mx18 QDR TM b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7S1618T4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7N161831B K7N163631B K7N163631B-QFCI25 K7N161831B |
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7P163666A-HC25 K7P163666A-HC33 K7P161866A-HC25 K7 |
1M X 18 STANDARD SRAM, 1.6 ns, PBGA119 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM 512Kx361Mx18同步流水线的SRAM 512K X 36 STANDARD SRAM, 1.5 ns, PBGA119
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF |
CONNECTOR ACCESSORY 512Kx16 bit Low Power Full CMOS Static RAM 512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|