| PART |
Description |
Maker |
| IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| AS7C1024B AS7C1024BV1.2 AS7C1024B-20TJIN AS7C1024B |
From old datasheet system
SRAM - 5V Fast Asynchronous
High Speed CMOS Logic Hex Inverters 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input NAND Gates with Open Drain 14-PDIP -55 to 125
High Speed CMOS Logic Quad 2-Input NOR Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NAND Gates with Open Drain 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NOR Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32
High Speed CMOS Logic Quad 2-Input NOR Gates 14-PDIP -55 to 125
|
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作）
128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
From old datasheet system
128*8HIGH SPEED COMOS STATIC RAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32
128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
131072-word x 8-bit High Speed CMOS Static RAM
131072-word x 8-bit High Speed CMOS Static RAM
|
Cypress Semiconductor, Corp.
SONY
|
| P3C1011-35TM P3C1011 P3C1011-10JC P3C1011-10JI P3C |
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 20 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 35 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 25 ns, PDSO44
|
Pyramid Semiconductor C...
PYRAMID[Pyramid Semiconductor Corporation]
Pyramid Semiconductor, Corp.
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
| T14L2M16A-12C T14L2M16A-10S T14L2M16A |
128K X 16 HIGH SPEED CMOS STATIC RAM
|
etc
Taiwan Memory Technology
Electronic Theatre Controls, Inc.
|
| LY61L12816UL LY61L12816UV |
128K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
