| PART |
Description |
Maker |
| TC58256FT |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NS256BDC |
256 MBit CMOS NAND EPROM
|
Toshiba
|
| TC58A040 TC58A040F |
4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58V64BDC |
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
Toshiba Corporation
|
| TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
| CD4023BMS CD4012BMS CD4011BMS FN3079 CD4023B CD401 |
From old datasheet system
CMOS NAND Gates
NAND, 3-Input, Triple, Rad-Hard, CMOS, Logic
NAND, 2-Input, Quad, Rad-Hard, CMOS, Logic
NAND, 4-Input, Dual, Rad-Hard, CMOS, Logic
|
INTERSIL[Intersil Corporation]
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| TC581282A |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TH58512FTI |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
| 74LVX03M |
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE (OPEN DRAIN)
LOGIC GATE|QUAD 2-INPUT NAND|LVX-CMOS|SOP|14PIN|PLASTIC 逻辑门|输入与非| LVX全CMOS |专科| 14PIN |塑料
|
SGS Thomson Microelectronics
Bourns, Inc.
|
