| PART |
Description |
Maker |
| SA8016 |
2.5GHz low voltage fractional-N
|
Philips
|
| SA7026DK |
1.3GHz low voltage fractional-N dual synthesizer.
|
Philips
|
| SA8016WC |
SCSI-3 FAST WIDE 3 FT CABLE
2.5GHz low voltage fractional-N synthesizer
|
NXP Semiconductors
|
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| MAXB4223EUT-T MAXB4224ESA MAXB4224EUT-T MAXB4226EU |
1GHz Low-Power SOT23 Current-Feedback Amplifiers with Shutdown
"1GHZ, Low-Power, SOT23 Current-Feedback Amp with Shutdown (AV > 2V/V)"
"1GHz, Low-Power, Dual Current-Feedback Amp with Shutdown"
1GHz, Low-Power, SOT23,Current-Feedback Amplifiers with Shutdown
"1GHz, Low-Power, Dual Current-Feedback Amp"
1GHZ, LOW-POWER, SOT23, CURRENT-FEEDBACK AMPLIFIERS WITH SHUTDOWN
|
Maixm
MAXIM[Maxim Integrated Products]
|
| SPIRIT1 |
Low data rate, low power sub-1GHZ transceiver
|
STMicroelectronics
|
| SP4653 |
1Ghz / 256 Prescaler with Low Current and Low Radiation
|
GEC Plessey Semiconductors
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| EVAL-ADF4150HVEB1Z ADF4150HVBCPZ ADF4150HVBCPZ-RL7 |
High Voltage, Fractional-N
|
Analog Devices
|
| NJG1105F |
1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC
|
NJRC[New Japan Radio]
|
