| PART |
Description |
Maker |
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| CY62137VNLL-70ZSXA CY62137VNLL-70ZSXE CY62137VNLL- |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44
|
Cypress Semiconductor Corp.
|
| CY14B101LA-SP45XI CY14B101LA-SP45XIT CY14B101LA-BA |
1 Mbit (128K x 8/64K x 16) nvSRAM; Organization: 128Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: SSOP 128K X 8 NON-VOLATILE SRAM, 45 ns, PDSO48
|
Cypress Semiconductor, Corp.
|
| M28256 M28256-12BS1T M28256-12BS6T M28256-12KA1T M |
From old datasheet system
256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection
256K (32K X8) PARALLEL EEPROM WITH SOFTWARE DATA PROTECTION
1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| CY7C1339G-166BGC CY7C1339G-133AXE CY7C1339G-200BGX |
4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 3.5 ns, PBGA119
4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 4 ns, PQFP100
4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 2.8 ns, PBGA119
4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| AS7C31024B AS7C31024B-20TJCN AS7C31024B-10JC AS7C3 |
8-Bit Parallel-Out Serial Shift Registers 14-TSSOP -40 to 85 128K X 8 STANDARD SRAM, 15 ns, PDSO32
3.3V 128K X 8 CMOS SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
8-Bit Parallel-Out Serial Shift Registers 14-TSSOP -40 to 85 128K X 8 STANDARD SRAM, 12 ns, PDSO32
8-Bit Parallel-Out Serial Shift Registers 14-SO -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Replaced by SN74LV165A : Parallel-Load 8-Bit Shift Register 16-TSSOP -40 to 85
Replaced by SN74LV165A : Parallel-Load 8-Bit Shift Register 16-SOIC -40 to 85
Replaced by SN74LV165A : Parallel-Load 8-Bit Shift Register 16-SSOP -40 to 85
SRAM - 3.3V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1231F-100AC CY7C1231F05 |
2-Mbit (128K x 18) Flow-through SRAM with NoBL Architecture
2-Mbit (128K x 18) Flow-through SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
| A28F200BR-B A28F200BR-T |
2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器)
2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器)
|
Intel Corp.
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| 28F002BV-T E28F002BV-B80 |
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5)
|
Intel
|
