| PART |
Description |
Maker |
| FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD750SOT343 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD750SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| TC2182 |
Low Noise Ceramic Packaged PHEMT GaAs FETs
|
Transcom, Inc.
|
| TC2101 |
Plastic Packaged Low Noise PHEMT GaAs FETs
|
Transcom, Inc.
|
| TC2211 |
Plastic Packaged Low Noise PHEMT GaAs FETs
|
Transcom, Inc.
|
| FPD1500DFN |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT 低噪声，高线性包装的PHEMTT
|
Filtronic Compound Semiconductors
|
| LP1500SOT223 LP1500SOT2231 LP1500SOT2232 LP1500SOT |
IC MOSFET DRIVER LS 8A SGL 8SOIC
IC MOSFET DRIVER LS 8A SGL 8-DIP
IC MOSFET DRVR LS 8A SGL 5TO-263
IC MOSFET DRVR LS 8A SGL 5TO-220
Low Noise/ High Linearity Packaged PHEMT
Low Noise, High Linearity Packaged PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| MGF4714CP 4714CP |
From old datasheet system
PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT 塑料模具包装低噪音铟镓砷迁移率晶体管
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Mitsubishi Electric, Corp.
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| TC1101 |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| CHA2157-15 |
55-60GHz Low Noise / Medium Power Amplifier
|
United Monolithic Semic...
|
