| PART |
Description |
Maker |
| FDFMA2P029Z08 FDFMA2P029Z |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.1A, 95m
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.1A, 95m
|
Fairchild Semiconductor
|
| FDFS2P102 FAIRCHILDSEMICONDUCTORCORP-FDFS2P102 FDF |
Integrated P-Channel MOSFET and Schottky Diode
FETKEY P-Channel MOSFET with Schottky Diode 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| FDFS2P106A FDFS2P106ANL |
Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode
Integrated 60V P-Channel PowerTrench剖 MOSFET and Schottky Diode
Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode
Integrated 60V P-Channel PowerTrench?/a> MOSFET and Schottky Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| BF1005SR BF1005SW BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2SJ404 2SJ405 2SK2163 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 40A条（丁）|20VAR
|
EPCOS AG
|
| DMS2220LFW-7 |
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
|
Diodes Incorporated
|
| FDFMA3N109 |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
