| PART |
Description |
Maker |
| IDT70V9289L 70V9389_DS_62206 IDT70V9389L9PRFI IDT7 |
64K x 18 Synch, 3.3V Dual-Port RAM, PipeLined/Flow-Through
64K x 16 Sync, 3.3V Dual-Port Ram, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64K x18/x16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
From old datasheet system
|
IDT[Integrated Device Technology]
|
| IDT709289 IDT709289L IDT709289L12PF IDT709289L12PF |
64K x 16 Sync, Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| IDT71V632 IDT71V632SA4PFI IDT71V632S8PF IDT71V632S |
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect 64K X 32 CACHE SRAM, 5 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| MCM63P631TQ4.5R MCM63P631TQ8R MCM63P631TQ7R |
64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 64K X 32 CACHE SRAM, 8 ns, PQFP100
64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 64K X 32 CACHE SRAM, 4.5 ns, PQFP100
64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 64K X 32 CACHE SRAM, 7 ns, PQFP100
|
Motorola, Inc.
TE Connectivity, Ltd.
Motorola Mobility Holdings, Inc.
|
| WCSS0232V1P-75AC WCSS0232V1P WCSS0232V1P-100AC WCS |
64K x 32 Synchronous-Pipelined Cache RAM
|
Weida Semiconductor, In...
WEIDA[Weida Semiconductor, Inc.]
|
| UT6164C64AQ-6 |
64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM 64K的64 SYNCHRONOU拧流水线突发的CMOS的SRAM
|
Electronic Theatre Controls, Inc.
|
| MCM63P631ATQ117 MCM63P631ATQ117R MCM63P631ATQ75R M |
64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| MCM63P631TQ117 MCM63P631TQ117R MCM63P631TQ8 MCM63P |
64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| UPD432232L |
2M-Bit CMOS Synchronous Fast SRAM 64K x 32-Bit Pipelined Operation
|
NEC Electronics
|
| GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
