| PART |
Description |
Maker |
| GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| MJE13007-TA3-T MJE13007-TF3-T MJE13007L-TA3-T MJE1 |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
UTC[Unisonic Technologies]
|
| FA5332P FA5332PM FA5331P FA5331PM FA5332M FA5331M |
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 220 kHz SWITCHING FREQ-MAX, PDIP16
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 150 kHz SWITCHING FREQ-MAX, PDIP16
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SD2115 2SD2115L 2SD2115S |
Bipolar power switching transistor
Silicon NPN Epitaxial Planar(Low frequency power amplifier)
|
HITACHI[Hitachi Semiconductor]
|
| MB3782 MB3782P MB3782PF MB37821 |
ASSP Power Supplies BIPOLAR Switching Regulator Controller
|
Fujitsu Component Limited.
|
| BUL146-D BUL146F |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
Power 8A 400V NPN
|
ON Semiconductor
|
| 2STF1340 |
Low voltage fast-switching NPN power bipolar transistor
|
STMicroelectronics
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
|
TOSHIBA
|
| GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
