| PART |
Description |
Maker |
| WS57C71C-70TMB 7924 WS57C71C-1 WS57C71C-45 WS57C71 |
MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM 高2K的军事8的CMOS胎膜早破/ RPROM
From old datasheet system
WS57C71C MILITARY HIGH SPEED 32K X 8 CMOS PROM/RPROM
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| P4C1256-15SMLF P4C1256-15JMBLF P4C1256-25JMBLF P4C |
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 35 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, PDIP28
Automotive Relays; V23232A0001X005-EV-808 ( Tyco Electronics )
|
Pyramid Semiconductor Corporation
SRAM
Pyramid Semiconductor, Corp.
|
| AT29LV256-25PC AT29LV256-25JI AT29LV256-25JC AT29L |
High Speed CMOS Logic Quad 2-Input Exclusive-OR Gates 14-SOIC -55 to 125 32K X 8 FLASH 3V PROM, 250 ns, PDSO28
High Speed CMOS Logic Quad 2-Input Exclusive-OR Gates 14-SOIC -55 to 125 32K X 8 FLASH 3V PROM, 200 ns, PDSO28
|
Atmel Corp.
Atmel, Corp.
|
| AT29C512-9 AT29C512-90JU AT29C512-70TC AT29C512-15 |
High Speed CMOS Logic Dual Positive-Edge-Triggered D-Type Flip-Flops with Set and Reset 14-PDIP -55 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 90 ns, PQCC32
High Speed CMOS Logic Quad 2-Input Exclusive-NOR Gates 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PDIP32
High Speed CMOS Logic Dual Positive-Edge-Triggered D-Type Flip-Flops with Set and Reset 14-SOIC -55 to 125
High Speed CMOS Logic Phase-Locked Loop with VCO and Lock Detector 16-SOIC -55 to 125
512K (64K x 8) 5-volt Only Flash Memory
512K 64K x 8 5-volt Only CMOS Flash Memory
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| UT28F256 UT28F256T-45UPX 5962F9689103QXA 5962F9689 |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
320 x 240 pixel format, LED or CFL Backlight
Recalibration Service for 2120B B&K Oscilloscope
Oscilloscope; Scope Type:Analog; Scope Bandwidth:30 MHz; Scope Channels:2 Scope; Calibrated:No; Rise Time:12ns; Sensitivity:5 mV/div to 5 V/div; Accuracy: /- 3 %; Resistance:1Mohm
Recalibration Service for 2125A B&K Oscilloscope
Radiation-Hardened 32K x 8 PROM 辐射加固32K的8胎膜早破
Recalibration Service for 2120B B&K Oscilloscope 辐射加固32K的8胎膜早破
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-Hardened 32K x 8 PROM
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
NEC, Corp.
Aeroflex Circuit Techno...
|
| AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125
High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125
4-Bit Magnitude Comparator 16-CDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| 29C010 AT29C010A-90 AT29C010A-70 AT29C010-XXX AT29 |
High Speed CMOS Logic Octal Non-Inverting Buffers and Line Drivers with 3-State Outputs 20-SOIC -55 to 125
1 Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 70 ns, PDIP32
1 Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
High Speed CMOS Logic Octal Non-Inverting Buffers and Line Drivers with 3-State Outputs 20-TSSOP -55 to 125 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
1 Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PDIP32
|
Atmel Corp.
Atmel, Corp.
|
| P3C125620JC P3C125620JI P3C125620TC P3C125620TI P3 |
HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM
|
Pyramid Semiconductor Corporation
|
| WS57C256F-1 WS57C256F-55 WS57C256F-55CMB WS57C256F |
WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| T14L256A T14L256A-8J T14L256A-8P |
32K X 8 HIGH SPEED CMOS STATIC RAM 32K的乘八高速CMOS静态RAM
|
TM Technology, Inc.
TMT[Taiwan Memory Technology]
|
| KM68V257E |
32K X 8 Bit High Speed CMOS Static RAM
|
Samsung Semiconductor
|
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