| PART |
Description |
Maker |
| WNMD2165 |
Dual N-Channel, 60V, 0.32A, Power MOSFET
|
TY Semiconductor Co., Ltd
|
| IRFP32N50KPBF |
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.135Ω , ID = 32A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.135ヘ , ID = 32A )
|
International Rectifier
|
| 6.9GRB00PV/032 |
ELECTRIC FUSE, 32A, 690VAC, 200000A (IR), INLINE/HOLDER
|
Mersen
|
| 821CPGRB27.6032 |
ELECTRIC FUSE, 32A, 800VAC, 90000A (IR), INLINE/HOLDER
|
Mersen
|
| LC1D18U7 |
Contactor (TeSys D) Non-Reversing, 18A(AC3) 32A(AC1), 3-Pole (3 NO)
|
List of Unclassifed Manufac...
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STGP7NB60FD STGB7NB60FD STGB7NB60FDT4 |
N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBT
N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT N沟道A - 600V 220 / D2PAK封装PowerMESHIGBT
(STGP7NB60FD / STGB7NB60FD) N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| HGTG30N60C3D FN4041 |
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STGB7NB60HD STGB7NB60HDT4 |
N-CHANNEL 7A - 600V DPAK PowerMESH IGBT N沟道A - 600V的IGBT的DPAK封装PowerMESH
N-CHANNEL 7A - 600V DPAK PowerMESH IGBT
N-CHANNEL 7A - 600V - D2PAK POWERMESH IGBT
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.65V的，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| R570.032.035 |
RF COAXIAL RELAY, SPDT, LATCHED, 0.32A (COIL), 12VDC (COIL), 3840mW (COIL), 3000MHz, PANEL MOUNT
|
RADIALL S A
|
