| PART |
Description |
Maker |
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V5964 C445964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V4450A C424450A |
From old datasheet system
4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| FLM5359-45F |
C-BAND INTERNALLY MATCHED FET
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| FLM3135-12F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM1314-18F |
X,Ku-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM4450-8F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM6472-6F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
