| PART |
Description |
Maker |
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| 2SK1522-E 2SK1521 2SK1521-E 2SK1522 |
Silicon N Channel MOS FET 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Renesas Electronics Corporation
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK1936-01 |
N-CHANNEL SILICON POWER MOS-FET 10 A, 500 V, 0.76 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2414 2SK2414-Z 2SK2414-Z-T1 2SK2414-Z-E1 2SK241 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业 Low withstand voltage Nch MOS FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
| 3SK300 |
Silicon N Channel MOS FET Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK2646-01 2SK2646 |
N-channel MOS-FET N-channel MOS-FET 4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd. FUJI ELECTRIC CO LTD
|
| 2SJ517 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK1399 D14770EJ2V0DS00 2SK1399-L 2SK1399-T2B |
N-channel MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING From old datasheet system
|
NEC[NEC]
|
| UPA1806GR-9JG UPA1806 UPA1806GR-9JG-E1 UPA1806GR-9 |
CONNECTOR ACCESSORY N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N Channel enhancement MOS FET
|
NEC Corp.
|