| PART |
Description |
Maker |
| RF1K49157 |
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET
6.3A, 30V, AVALANCHE RATED, SINGLE N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
| IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
| IRFE210 JANTXV2N6784U JANTX2N6784U |
200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package 200伏单N沟道高可靠性的18 MOSFET的引脚LCC封装
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R?TRANSISTORS SURFACE MOUNT (LCC-18)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R剖TRANSISTORS SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BUZ102 C67078-S1351-A2 BUZ102E3045A BUZ102E3249 |
N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
|
| SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated
SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated
7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Infineon Technologies AG
|
| RFG60P05E |
60A/ 50V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET
|
Fairchild Semiconductor
|
| JANTXV2N7224 JANTX2N7224 2N7224 IRFM150 |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管（之HEXFET晶体管）
REPETITIVE AVALANCHE RATED AND dv/dt RATED
HEXFET? TRANSISTOR
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| S60SC3ML |
Schottky Rectifiers (SBD) (30V 60A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| UTT60P03 UTT60P03G-TN3-R |
-60A, -30V, P-CHANNEL POWER MOSFETS
|
Unisonic Technologies
|
| BUK9Y3R0-40E |
Repetitive avalanche rated
|
NXP Semiconductors
|
