| PART |
Description |
Maker |
| MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111M |
8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE 512K X 16 OTPROM, 90 ns, PDIP42
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| MX27C8100PC-20 27C8100-10 27C8100-12 27C8100-15 27 |
8M-BIT [1M x8/512K x16] CMOS OTP ROM
|
MCNIX[Macronix International]
|
| MX27C8100 27C8100 |
8M-BIT [1M x8/512K x16] CMOS OTP ROM
From old datasheet system
|
Macronix 旺宏
|
| MX29SL800CBTI-90 MX29SL800CTXHI-90G MX29SL800CTXBC |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
|
Macronix International
http://
|
| MX29LV800TXBI-90 MX29LV800TXEC-90 MX29LV800TXEI-90 |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| EM680FU16 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM6160FR16AW-12LF EM6160FV16AW-12LF EM6161FR16AW-1 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Sol...
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K6F8016U6D-XF70 K6F8016U6D K6F8016U6D-FF55 K6F8016 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
CONNECTOR ACCESSORY 连接器附
CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位）.0伏的CMOS只引导扇区闪
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只引导扇区闪
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只引导扇区闪
JT 16C 16#16 PIN RECP
CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR
SSR OCMOS FET 200MA NO 6-SOIC
|
SPANSION LLC
Spansion, Inc.
Spansion Inc.
|
| NM27C040 NM27C040Q150NBSP NM27C040Q150 27C040 NM27 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM
4194304-Bit (512K x 8) High Performance CMOS EPROM
4,194,304-Bit (512K x 8) High Performance CMOS EPROM
4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM
IC-4MB CMOS OTP PROM
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| MX29LV800BXBI-70 MX29LV800TXBI-70 MX29LV800BTI-90 |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
240 x 320 pixel format (portrait mode), Compact LCD size
25 A 35V Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
25 A 35V Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
