| PART |
Description |
Maker |
| 2SD526 2SD526R 2SD526Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB
POWER TRANSISTORS(4A/80V/30W)
POWER TRANSISTORS(4A,80V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 4A条一（c）| TO - 220AB现有
POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| MJE170 MJE182 MJE171 MJE172 MJE180 MJE181 |
POWER TRANSISTORS(3.0A,40-80V,12.5W) 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
POWER TRANSISTORS(3.0A /40-80V /12.5W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| CDSV3-217-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
|
Comchip Technology
|
| FQU24N08 FQD24N08 FQD24N08TF FQD24N08TM |
80V N-Channel QFET
80V N-Channel MOSFET 19.6 A, 80 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 2SD18981 2SD1898 2SD1733 2SD1768S 2SD1863 |
Power Transistor (80V, 1A)
|
ROHM[Rohm]
|
| NTP70N08L |
80V Power MOSFET
|
ON Semiconductor
|
| RFP2N10L RFP2N08L FN2872 |
From old datasheet system
2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
|
