| PART |
Description |
Maker |
| M63840FP M63840KP M63840P |
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
|
Mitsubishi Electric Semiconductor
|
| M54581P |
S-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M54563P12 M54563FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
0.35 A 8 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO20
|
Mitsubishi Electric Semiconductor
|
| R1112N R1112N4.3BTR R1112N4.0BTR R1112N1.6ATL R111 |
Low noise 150mA LDO regulator. Output voltage 3.0V. Active high type. Standard taping type TR
Low noise 150mA LDO regulator. Output voltage 3.0V. Active high type. Taping type TL
Low noise 150mA LDO regulator. Output voltage 3.0V. Active low type. Standard taping type TR
Low noise 150mA LDO regulator. Output voltage 3.0V. Active low type. Taping type TL
LOW NOISE 150mA LDO REGULATOR 5 V FIXED POSITIVE LDO REGULATOR, 0.26 V DROPOUT, PDSO5
Analog IC 模拟IC
Test fixture for 0402 - 1812 body sizes
Linear Sensor Photodiode Array; 102x1 Sensor-Elements Organization; 300 Dots-Per-Inch (DPI) Sensor Pitch; On-Chip 8-bit Analog-to-Digital Conversion; Three-Zone Prgrammable Offset (Dark Level) and Gain; High Sped Serial Interface; 1MHz Pixel Rate
High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com
|
HIROSE ELECTRIC Co., Ltd.
Ricoh Co., Ltd.
RICOH electronics devic...
|
| L8998 |
AIR-COOLED VUV LIGHT SOURCE UNIT
|
HAMAMATSU[Hamamatsu Corporation]
|
| L10366-10 L10366-11 L10366-12 |
HIGH BRIGHTNESS VUV LIGHT SOURCE UNIT
|
Hamamatsu Corporation
|
| R1120N R1120N301A R1120N301A-TL R1120N301A-TR R112 |
Low noise 150mA LDO regulator. Output voltage 2.3V. H active type. Taping specification TL.
LOW NOISE 150mA L.D.O REGULATOR
|
RICOH[RICOH electronics devices division]
|
| AAT3216 AAT3216IGV-1.2-T1 AAT3216IGV-1.5-T1 AAT321 |
150mA MicroPower??LDO with PowerOK
150mA MicroPower LDO with PowerOK
150mA MicroPower⑩ LDO with PowerOK
Multiconductor Cable; Number of Conductors:3; Conductor Size AWG:18; No. Strands x Strand Size:42 x 34; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:105 C; Voltage Nom.:300V RoHS Compliant: Yes
150mA MicroPowerLDO with PowerOK ⑩微功50mA的LDO稳压器与PowerOK
|
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Advanced Analogic Technologies, Inc.
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| PAA150F PAA150F-12 PAA150F-15 PAA150F-24 PAA150F-3 |
Unit type
|
RSG Electronic Components GmbH
|
