| PART |
Description |
Maker |
| K1S3216B1C K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K1S1616B1A-I K1S1616B1A K1S1616B1A-BI70 K1S1616B1A |
1Mx16 bit Uni-Transistor Random Access Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| EMC326SP16AJT-10L EMC326SP16AJT-10LF EMC326SP16AJT |
2Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
|
| KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000BETY KM23C32000BTY |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000CET |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000AG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23V32005BG |
32M-Bit (4Mx8/2Mx16) COMS MASK ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| A82DL3234 A82DL3244 A82DL3224UG-70 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAMA82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位4Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
