| PART |
Description |
Maker |
| NTE2114 |
Integrated Circuit MOS, Static 4K RAM, 300ns
|
NTE[NTE Electronics]
|
| TC55VD1618FF-133 TC55VD1618FF-150 TC55VD1618FF-167 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55V16100FT-10 TC55V16100FT-12 TC55V16100FT-15 |
1,048,576-WORD BY 16-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| NTE7154 |
Integrated Circuit Control Circuit for Switch Mode Power Supplies using MOS Transistors
|
NTE[NTE Electronics]
|
| PD16707 |
MOS INTEGRATED CIRCUIT
|
NEC Corp.
|
| UPD166015GR-E1-AY UPD166015GR-E2-AY |
MOS INTEGRATED CIRCUIT
|
Renesas Electronics Corporation
|
| UPD720110 UPD720110AGC-8EA |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD77113AF1-XXX-CN1 UPD77114 UPD77113A UPD77114GC- |
MOS INTEGRATED CIRCUIT
|
http://
NEC Corp.
|
