| PART |
Description |
Maker |
| 2SC311303 2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| 2SC2459 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications
|
TOSHIBA
|
| 2SC2705Y 2SC2705 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92VAR
|
TOSHIBA
|
| 2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
TOSHIBA
|
| 2SC342106 2SC3421 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC3381 E000839 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE, MAIN AMPLIFIERS) npn型外延型（低噪声音频放大器应用推荐用于级联，电流镜电路学前，主功放的第一阶段
From old datasheet system
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS)
|
Toshiba Semiconductor
|
| HN1B04F07 HN1B04F |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC5052 E001019 |
NPN EPITAXIAL TYPE (AUDIO POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4117 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
