| PART |
Description |
Maker |
| HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| APT10078SLL APT10078BLL APT10078BLL_04 APT10078BLL |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
|
FAIRCHILD SEMICONDUCTOR CORP
|
| UPA2755AGR-E1-AT PA2755AGR-15 |
8 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
| MRF136Y |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL MOS BROADBAND RF POWER FET
|
MACOM[Tyco Electronics]
|
| RJK0349DPA RJK0349DPA-00-J0 |
45 A, 30 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0366DPA RJK0366DPA-00-J0 |
25 A, 30 V, 0.0168 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0355DPA RJK0355DPA-00-J0 |
30 A, 30 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MRF21125S MRF21125 MRF21125SR3 |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
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