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CR02AM-4 - 0.47 A, 200 V, SCR, TO-92 0.47 A, 300 V, SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

CR02AM-4_154887.PDF Datasheet


Part No.	CR02AM-4 CR02AM CR02AM-6 CR02AM-8
Description	0.47 A, 200 V, SCR, TO-92 0.47 A, 300 V, SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size	65.68K / 5 Page
Maker	MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Homepage	http://www.mitsubishichips.com/
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Full text search : 0.47 A, 200 V, SCR, TO-92 0.47 A, 300 V, SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

Product Description search : 0.47 A, 200 V, SCR, TO-92 0.47 A, 300 V, SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

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