| PART |
Description |
Maker |
| TC551001PL-70 TC551001FL-10 TC551001FL-70 |
x8 SRAM
x8SRAM
131,072 Words x 8-Bit Static RAM
|
Toshiba
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 36 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| TC554001FL TC554001FL-10 TC554001FL-70 TC554001FL- |
524,288 WORDS x 8BIT STATIC RAM 524,288字8位静态RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MSM531652F |
1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM, 16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| LC338128M LC338128P LC338128PL LC338128M-80 LC3381 |
1 MEG (131072 words x 8 bit) pseudo-SRAM
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| TMM2018AP TMM2018AP-25 TMM2018AP-35 TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply 16,384位高速，低功耗静态随机存取记2048字由8位，V电源供电
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 |
Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
|
SANYO
|
