| PART |
Description |
Maker |
| M57951L |
HYBRID IC FOR DRIVING TRANSISTOR MODULES
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| ZXTN10150DZ |
150V NPN LED DRIVING TRANSISTOR
|
DIODES
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| 2SA675 2SA675-T 2SA675-T/JD 2SA675-T/JM 2SA675A 2S |
Silicon transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR DRIVING FLUORESCENT INDICATOR PANNEL
|
NEC Corp.
|
| BUL53B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 12 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
TT electronics Semelab, Ltd.
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| TAN350 |
high power COMMON BASE bipolar transistor.
|
ADPOW[Advanced Power Technology]
|
| BDX67 BDX67A BDX67B BDX67C |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 16 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
