| PART |
Description |
Maker |
| PMMAD1103 |
ultra low capa citance multi-line steering diode arra y
|
Protek Devices
|
| HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
HSMS-2802 · Low reverse leakage Schottky diode
HSMS-2803 · Low reverse leakage Schottky diode
HSMS-2804 · Low reverse leakage Schottky diode
HSMS-2805 · Low reverse leakage Schottky diode
HSMS-2808 · Low reverse leakage Schottky diode
HSMS-280B · Low reverse leakage Schottky diode
HSMS-280C · Low reverse leakage Schottky diode
HSMS-280E · Low reverse leakage Schottky diode
HSMS-280F · Low reverse leakage Schottky diode
HSMS-280K · Low reverse leakage Schottky diode
HSMS-280L · Low reverse leakage Schottky diode
HSMS-280M · Low reverse leakage Schottky diode
HSMS-280N · Low reverse leakage Schottky diode
HSMS-280R · Low reverse leakage Schottky diode
|
http://
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| NSR0240P2T5G |
40V 0.2A low IR SOD-923 Schottky Diode 0.2 A, 40 V, SILICON, SIGNAL DIODE
Schottky Barrier Diode
|
ON Semiconductor
|
| BUK7520-55A BUK7620-55A |
TrenchMOS(tm) standard level FET
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
TrenchMOS TM standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHP125N06LT PHB125N06LT PHP125N06L |
TrenchMOS transistor Logic level FET(TrenchMOS 晶体管标准电平场效应 TrenchMOS场效应晶体管逻辑电平TrenchMOS晶体管标准电平场效应管）
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BAS70DW-04 BAS70DW-06-TP BAS70TW BAS70DW-05 |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 70V SOT363 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| CMOSH-4E |
SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE
SMD Schottky Diode Single: High Current
|
Central Semiconductor Corp.
|
| MBRX0520 MBRX052008 MBRX0520-TP MBRX0530 MICROCOMM |
0.5 Amp Schottky Rectifier 20 to 60 Volts
DIODE SCHOTTKY 20V 500MA SOD323 0.5 A, 20 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| BAT60B Q62702-A1189 BAT60 Q62702-A118 |
From old datasheet system
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
|
SIEMENS[Siemens Semiconductor Group]
|
| BAT54W |
30V 0.2A Schottky Discrete Diode in a SOT-323 package
SCHOTTKY DIODE 0.5 Amp
|
International Rectifier
|
