| PART |
Description |
Maker |
| M54516P |
5-UNIT 500MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Semiconductor
|
| M54585KP |
8-UNIT 500MA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Powerex Power Semiconductors
|
| M54564FP M54564P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Semiconductor
|
| M54562 M54562FP M54562P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M54563FP M54563P/FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
|
| M63840FP M63840KP M63840P |
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
|
Mitsubishi Electric Semiconductor
|
| GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 6A条一（c）| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
| LB1274 |
6-Unit, Darlington Transistor Array
|
SANYO[Sanyo Semicon Device]
|
| IR2410 |
7-Unit 400mA Darlington Transistor Array
|
Sharp
|
| IR3403 |
5-Unit 400mA Darlington Transistor Array
|
Sharp
|
