PART |
Description |
Maker |
2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
|
International Rectifier List of Unclassifed Man...
|
43045-1208 43045-1806 43045-1608 43045-2406 43045- |
Header; No. of Contacts:12; Pitch Spacing:3mm; No. of Rows:2; Series:Micro-Fit; Connector Body Material:Polymer; Mounting Type:PC Board; Terminal Type:Right Angle Surface Mount RoHS Compliant: Yes POWER CONNECTOR 430451806 POWER CONNECTOR 430451608 POWER CONNECTOR Microfit 3.0 RA SMT/Clip DR Tin 24 Ckt POWER CONNECTOR 430450206 POWER CONNECTOR
|
Molex, Inc.
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
RMPA2271 |
WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector
|
FAIRCHILD[Fairchild Semiconductor]
|
2SC5935P 2SC5935 2SC5935Q |
Power Device - Power Transistors - General-Purpose power amplification SILICON NPN TRIPLE DIFFUSION PLANAR TYPE
|
Panasonic Semiconductor
|
2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
TB2959HQ |
Maximum Power 47W BTL 4-ch Audio Power IC Power amplifier ICs
|
Toshiba Semiconductor
|
2SD1272 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|