| PART |
Description |
Maker |
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS1 |
LED T5.5 24V12.5MA RED RoHS Compliant: Yes
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor Inc.
|
| HYB3165405BT-40 HYB3164405BT-40 HYB3164405BJ-40 HY |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 40 ns, PDSO32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
|
http://
Infineon Technologies AG
SIEMENS AG
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K4E640412E |
(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
|
Samsung semiconductor
|
| HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http://
Infineon Technologies AG
SIEMENS AG
|
| MC-45V16AD642KS-A75 MC-45V16AD642KS |
16M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
| MC-4516CB646XF-A10 MC-4516CB646XF-A80 MC-4516CB646 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-45V16AB642KF-A75 |
16M-WORD BY 64-BIT VirtualChannel DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-4516CA726XF-A10 MC-4516CA726PF-A10 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
