| PART |
Description |
Maker |
| IRFW620B IRFI620B IRFI620BTUFP001 IRFW620BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW620A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFI620A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS650B IRFS650BFP001 |
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFS650A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW640BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW640A
|
Fairchild Semiconductor
|
| IRFP250A |
200V N-Channel A-FET / Replaced by IRFP250B
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| ZVP1320FTA ZVP1320F-12 ZVP1320F |
200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23
|
Diodes Incorporated
|
| IRLR210 IRLR210A IRLR210ATF IRLR210ATM |
ADVANCED POWER MOSFET
200V N-Channel Logic Level A-FET / Substitute of IRLR210
|
Fairchild Semiconductor
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQU630 FQD630 FQD630TM |
200V N-Channel QFET
200V N-Channel MOSFET(N沟道增强型MOS场效应管（漏电流7A, 漏源电压200V，导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET
200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
| STD5NB20 6365 |
N - CHANNEL 200V - 0.70ohm - 5A DPAK PowerMESHO MOSFET
From old datasheet system
N - CHANNEL 200V - 0.70 - 5A DPAK PowerMESH TM MOSFET
N - CHANNEL 200V - 0.70 Ohm - 5A DPAK PowerMESH MOSFET
|
STMicroelectronics
SGS Thomson Microelectronics
|
