| PART |
Description |
Maker |
| PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦，1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTF10120 |
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor 120瓦，1.8-2.0 GHz的GOLDMOS场效应晶体管
120 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10122 |
50 Watts WCDMA, 2.1.2 GHz GOLDMOS Field Effect Transistor
50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
50 Watts WCDMA 2.1-2.2 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10019 |
70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20080 |
25 Watts, 1.6-1.7GHz RF Power Transistor
25 Watts, 1.6-1.7 GHz RF Power Transistor
25 Watts 1.6-1.7 GHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| 2F-10 |
up to 3 GHz 2 Watts
|
Inmet Corporation
|
| PH1214-110M |
Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 110瓦特,1.20 - 1 .40千兆赫，150毫秒脉冲10％的
|
Vishay Intertechnology, Inc.
MACOM[Tyco Electronics]
|
| PE6820 |
50 Watts WR-42 RF Load Up To 26.5 GHz
|
Pasternack Enterprises, Inc.
|
