| PART |
Description |
Maker |
| PDTA115ES PDTA115E PDTC115EU PDTA115EE PDTA115EEF |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
PDTA115E series; PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTA114YEF PDTA114YT PDTA114YM |
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=10千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PDTA144TEF PDTA144TM |
PNP resistor-equipped transistors; R1 = 47 kohm, R2 = open 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open
|
NXP Semiconductors N.V.
|
| PEMD13 PUMD13 |
NPN-PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm NPN-PNP配电阻型晶体管，R1=4.7千欧姆，R2=47千欧
NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
NPN/PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PUMB19 PEMB19 |
PEMB19; PUMB19; PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open
|
Philips
|
| PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆，R2=10千欧
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?
|
NXP Semiconductors N.V.
|
| PEMD13 PEMD13_1 |
NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = 47 kohm
From old datasheet system
NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = 47 KOHM
|
Philips Semiconductors
NXP Semiconductors
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PDTA143XE PDTA143XK |
PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW
|
NXP Semiconductors
|
| PDTA143ZMB |
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
|
NXP Semiconductors
|
| PDTA144 PDTA144EE |
PNP resistor-equipped transistor
|
PHILIPS[Philips Semiconductors]
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