| PART |
Description |
Maker |
| BSM682F |
MOSFET power module, 800V, 6 x 10A
|
Siemens
|
| TSN10A80 |
THYRISTOR - 10A 800V TO-262
|
NIEC[Nihon Inter Electronics Corporation]
|
| MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN
Complementary Silicon Power Transistors
Power 10A 250V Discrete PNP
|
ON Semiconductor
|
| STU10NB80 |
N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET
|
STMicroelectronics
|
| STU10NB80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET
|
ST Microelectronics
意法半导
|
| IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A)
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
|
IRF[International Rectifier]
http://
|
| IRFPE40 IRFPE40PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
|
International Rectifier
|
| 2SC4585 |
Switching Power Transistor(10A NPN)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 2SC4581 |
Switching Power Transistor(10A NPN)
|
Shindengen Electric Mfg...
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| SPA11N80C3 SPP11N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
|
Infineon Technologies AG
|
| 10ETS16STRR 10ETS16STRL |
800V 10A Std. Recovery Diode in a D2-Pakpackage
1600V 10A Std. Recovery Diode in a D2-Pakpackage
|
International Rectifier
|
