| PART |
Description |
Maker |
| LH28F160S3T-L10 LH28F160S3T-L10A LHF16KA6 |
Flash Memory 16M (2MB x 8/1MB x 16)
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB 8/1MB 16)
Flash Memory 16M (2MB 】 8/1MB 】 16)
|
SHARP[Sharp Electrionic Components]
|
| LH28F160S5HT-L70 LHF16KA3 |
Flash Memory 16M (2MB 8/1MB 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp Corporation
Sharp Electrionic Components
|
| LH28F160S5T-L70 LH28F160S5T-L70A LHF16KA9 |
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB x 8/1MB x 16)
|
SHARP
|
| LHF16KA4 LH28F160S5NS-L70 |
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB 8/1MB 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp Corporation
Sharp Electrionic Components
|
| LHF16KA7 LH28F160S3HT-L10A |
Flash Memory 16M (2MB 8/1MB 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp Corporation
Sharp Electrionic Components
|
| LH28F016SCR-L12 |
16M-bit(2MB x 8)smart voltage Flash Memory
|
SHARP
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| LH28F160S5 LH28F160S5-L10 LH28F160S5-L70 LH28F160S |
LH28F160S5D-L70 16MBIT (2MB x 8/1MB x 16)Smart 5 Flash Memory
16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY
16-MBIT (2MBx8/1MBx16) Smart 5 Flash MEMORY
|
SHARP[Sharp Electrionic Components]
|
| ACE25C200 |
2MB Serial Flash Memory
|
ACE Technology Co., LTD.
|
| LHF00L14 |
Flash Memory 32M (2MB x 16)
|
Sharp Microelectronics
|
| LHF00L13 |
Flash Memory 32M (2MB x 16)
|
Sharp Microelectronics
|
