| PART |
Description |
Maker |
| PZT2222AT1 PZT2222AT1_D ON2778 PZT2222AT1D PZT2222 |
SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| BSP16T1-D |
SOT-223 Package High Voltage Transistor PNP Silicon
|
ON Semiconductor
|
| 20CJQ030TR |
30V 2A Schottky Common Cathode Diode in a SOT-223 package
|
International Rectifier
|
| STN4NF06L |
N-channel 60 V, 0.07 Ohm, 4 A STripFET(TM) 2 Power MOSFET in SOT-223 package
|
ST Microelectronics
|
| IRFL9014TR |
-60V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFL014N IRFL014NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFL024Z |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRLL014N IRLL014NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| BUK9880-55T/R |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 7.5A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 7.5AI（四）|的SOT - 223
|
Pulse Engineering, Inc.
|
| FQT26N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 5.9AI（四）|的SOT - 223
|
Fairchild Semiconductor, Corp.
|
| AUIRLL024N |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package
|
International Rectifier
|
