PART |
Description |
Maker |
NM27C020 NM27C020QE150 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy] 2097152-Bit (256K x 8) UV Erasable CMOS EPROM 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM 2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
SMJ27C010A05 SMJ27C010A-15JM AS27C010A-15ECAM AS27 |
1 MEG UVEPROM UV Erasable Programmable Read-Only Memory 128K X 8 UVPROM, 150 ns, CDIP32 Industry standard 32-pin ceramic dual-in-line package
|
AUSTIN SEMICONDUCTOR INC Micross Components
|
MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
CHR CHR2520FC-10MEG-1 |
10 Meg to 100 Meg, 1 Tolerance, Temperature Coefficient to as low as 25 ppm/C
|
Rhopoint Components Ltd.
|
MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks 2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
AS27C256-90ECA AS27C256-15ECA AS27C256-30ECA AS27C |
256K UVEPROM UV Erasable Programmable Read-Only Memory 256K UVEPROM UV Erasable Programmable Read-Only Memory
|
Austin Semiconductor
|
MT48H16M32LF MT48H16M32LFCJ-75 MT48H16M32LFCJ-75IT |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
MICRON[Micron Technology]
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
EP1810LC-45 EP1810LC-20 EP1810LI-25 EP1810LI-45 EP |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件 Dual LDO with Low Noise, Low IQ, and High PSRR; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R UV-Erasable/OTPComplexPLD
|
Vicor, Corp.
|
EP610IPC-10 EP610SC10 EP610SC-25 EP610SC-15T EP610 |
ASIC UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件 4kbit EEPROM; Triple Voltage Monitor with Integrated CPU Supervisor; Temperature Range: 0°C to 70°C; Package: 14-TSSOP UV-Erasable/OTP可编程逻辑器件
|
Rochester Electronics, LLC
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