| PART |
Description |
Maker |
| M48Z128Y-70PM1 M48Z128Y-85PM1 M48Z128-70PM1 |
1 MBIT (128KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| M48Z512A M48Z512A-70CS1 M48Z512A-70CS9 M48Z512A-70 |
CAP,TANT,CHIP,4.7UF,10%,25V
4 Mbit 512Kb x8 ZEROPOWER SRAM 4兆位的SRAM 512KB的x8 ZEROPOWER
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M68Z128W M68Z128W-70N1T M68Z128WN |
3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable 3V的，1兆位的输128KB的x8低功耗SRAM启用
128K X 8 STANDARD SRAM, 70 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
3V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M48T128V-70PM1 M48T128V-70PM1TR M48T128V-85PM1 M48 |
3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| M48T128V M48T128Y 5746 |
3.3V-5V 1 Mbit (128Kb x 8) TIMEKEEPER ? SRAM
From old datasheet system
|
STMicro
|
| M48Z2M1Y M48Z2M1Y-70PL1 M48Z2M1Y-70PL9 M48Z2M1YPL |
16 Mb (2Mb x 8) ZEROPOWER SRAM
122 x 32 pixel format, Compact LCD size
16 Mb 2Mb x 8 ZEROPOWER SRAM
|
SGS Thomson Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY14B101LA-SP45XI CY14B101LA-SP45XIT CY14B101LA-BA |
1 Mbit (128K x 8/64K x 16) nvSRAM; Organization: 128Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: SSOP 128K X 8 NON-VOLATILE SRAM, 45 ns, PDSO48
|
Cypress Semiconductor, Corp.
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| M48Z35AV-10PC1 M48Z35Y-70PC6TR M48Z35 M48Z35-70MH1 |
256 Kbit (32 Kbit x 8) ZEROPOWER SRAM
256 KBIT (32KB X 8) ZEROPOWER SRAM
256 Kbit (32 Kbit x 8) ZEROPOWER SRAM 256千位2千位× 8）ZEROPOWER的SRAM
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| M29F100B M29F100T 5123 M29F100B-90M1R M29F100B-90M |
NND - 1 MBIT (128KB X 8 OR 64KB X 16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
From old datasheet system
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)Single Supply Flash Memory
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
