| PART |
Description |
Maker |
| MWS51141 MWS5114E3 MWS5114 MWS5114D1 MWS5114D2 MWS |
1024-Word x 4-Bit LSI Static RAM
|
INTERSIL[Intersil Corporation]
|
| CXK5T16100TM- CXK5T16100TM-12LLX CXK5T16100TM |
128 x 64 pixel format, LED Backlight available
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| MC14562B MC14562BCL MC14562BD ON0934 MC14562BCP |
128-Bit Static Shift Register 4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, CDIP14
128-Bit Static Shift Register 128位静态移位寄存器
128-Bit Static Shift Register 4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, PDIP14
ORDERING INFORMATION
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MSM521218 |
65,536-Word ?18-Bit CMOS STATIC RAM(64k瀛??8浣????AM)
65,536-Word x 18-Bit CMOS STATIC RAM
From old datasheet system
65,536-Word ×18-Bit CMOS STATIC RAM(64k字8位静态RAM) 65,536字18位的CMOS静态RAM4K的字× 18位静态RAM）的
|
OKI SEMICONDUCTOR CO., LTD.
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC55 |
131,072 WORD x 8 BIT STATIC RAM 131072字8位静态RAM
131072 WORD x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM
262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
| MSM51257CLL |
32,768-Word ?8-Bit CMOS STATIC RAM(32k瀛??浣????AM)
32,768-Word x 8-Bit CMOS STATIC RAM
From old datasheet system
32,768-Word ×8-Bit CMOS STATIC RAM(32k字位静态RAM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| MSM51257CLP |
32,768-Word ?8-Bit CMOS STATIC RAM(32k瀛??浣????AM)
From old datasheet system
32,768-Word x 8-Bit CMOS STATIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
