PART |
Description |
Maker |
2SJ625 2SJ625-T1B 2SJ625-T2B |
Pch enhancement type MOS FET MOS FIELD EFFECT TRANSISTOR
|
NEC[NEC]
|
UPA1911ATE UPA1911A UPA1911ATE-T2 UPA1911ATE-T1 |
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1917TE UPA1917 UPA1917TE-T2 UPA1917TE-T1 |
Pch enhancement-type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Pch enhancement-type MOS FET
|
NEC[NEC]
|
UPA1814GR-9JG-E1 UPA1814GR-9JG-E2 |
Pch enhancement type MOS FET
|
NEC
|
UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp. NEC, Corp. Lattice Semiconductor, Corp.
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC Corp. NEC[NEC]
|
UPA1857 UPA1857GR-9JG UPA1857GR-9JG-E2 UPA1857GR-9 |
Nch enhancement type power MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1763G-E1 UPA1763G-E2 |
N-channel enhancement type power MOS FET(Dual type)
|
NEC
|
UPA1722G-E1 UPA1722G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
UPA1721G-E1 UPA1721G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
FX30KMJ-3 FX30KMJ-3-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|