| PART |
Description |
Maker |
| ECH8668 |
Power MOSFET, 20V, 7.5A, 17mOhm, -20V, -5A, 38mOhm, Complementary Dual ECH8
|
ON Semiconductor
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| SSG4520H12 |
N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| QS5U21 |
Transistors > MOS FET > TSMT3,5,6 Series
Small switching (?20V ?1.5A)
From old datasheet system
Small switching (-20V, -1.5A)
|
ROHM[Rohm]
|
| AH174Z-WLA-B AH174 AH174A-P-A AH174A-PA-A AH174A-P |
V(cc): 20V; V out(off): 20V; I(s): 25mA; inverted output hall effect latch for high temperature. For rotor position sensing, current switch, encoder, RPM detection
Synchronous 4-Bit Up/Down Binary Counters With Dual Clock and Clear 16-SO 0 to 70
SPECIALTY ANALOG CIRCUIT, PSIP3
|
http://
ANACHIP[Anachip Corp]
INTEGRATED CIRCUIT TECHNOLOGY CORP
|
| CDSV3-204-G CDSV3-204-G12 |
Switching Diodes Array, V-RRM=20V, V-R=20V, P-D=200mW, I-F=100mA
Small Signal Switching Diodes
|
Comchip Technology
|
| 2SA1834 A5800344 2SC5001 2SC5001TLR 2SA1834TLR 2SC |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|律师- 63
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SC-63
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | SC-63
Low VCE(sat) Transistor (Strobe flash) (-20V, -10A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| AH172 AH172-WA AH172-WAA AH172-WAB AH172-WLA AH172 |
V(cc): 20V; V out(off): 20V; I(s): 20mA; imternal pull-up hall effect latch. For rotor position sensing, current switch, encoder, RPM detection
Internal Pull-up Hall Effect Latch 内部上拉霍尔效应锁存
|
Anachip Corp
Intel, Corp.
|
| FDC638APZ |
-20V P-Channel 2.5V PowerTrenchSpecified MOSFET
P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| IRF7459 IRF7459TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 12A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY
20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
