| PART |
Description |
Maker |
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| PE43704MLCA-Z |
UltraCMOS RF Digital Step Attenuator, 7-bit, 31.75 dB with Optional Vss Bypass Mode 9 kHz - 8 GHz
|
Peregrine Semiconductor
|
| EM47EM3288SBA EM47EM3288SBA-125 EM47EM3288SBA-150 |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM47FM0888MBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM44CM1688LBC-25E EM44CM1688LBC-3 EM44CM1688LBC-3I |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| MT58L64L32F |
2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through
|
MICRON
|
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| MT8814 |
8 x 12 Analog Switch Array with Low On-resistance, for (VDD - VEE) =4.5 V to 13.2 V, with Chip Select
|
Zarlink Semiconductor
|
| 2SK3456 |
N-Channel MOSFET
Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| MT8816 |
8 x 16 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4. 5 V to 13.2 V, with Chip Select
|
Zarlink Semiconductor
|
| MSK4324HU |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 BRUSHLESS DC MOTOR CONTROLLER, 15 A, CDFM43
|
M.S. Kennedy, Corp.
|
