| PART |
Description |
Maker |
| J308LTR-E3 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
|
Vishay Intertechnology, Inc.
|
| J309-TA |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
|
VISHAY SILICONIX
|
| 3SK300 3SK300ZR-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Comchip Technology Co., Ltd.
Renesas Electronics Corporation
|
| 2N548606 2N5486G 2N5486 |
JFET VHF/UHF Amplifiers N?Channel - Depletion
JFET VHF/UHF Amplifiers N−Channel - Depletion
|
ONSEMI[ON Semiconductor]
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| SH25A10LGNBSP SH25A10LG |
N-Channel UHF/Microwave JFET
From old datasheet system
|
Microwave Technology
|
| 2SK210 2SK210-BL |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
|
TOSHIBA
|
| UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| BLF2022-40 |
UHF power LDMOS transistor UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| FLM0910-25F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
|
|
