| PART |
Description |
Maker |
| D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| D2210UK D1231UK D2010 D2010UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
|
| SE1020W SE1020 |
1.25 Gb/s Transimpedance Amplifier Product Preview
Amplifier, 1.25Gb/s Transimpedance Amplifier
|
SiGe Semiconductor, Inc...
SiGe Semiconductor Inc.
SIGE[SiGe Semiconductor, Inc.]
|
| SE1031W SE103 |
LightCharger?/a> 2.5 Gb/s Transimpedance Amplifier LP Final
LightCharger 2.5 Gb/s Transimpedance Amplifier LP Final
LightCharger⑩ 2.5 Gb/s Transimpedance Amplifier LP Final
|
SIGE[SiGe Semiconductor Inc.]
SIGE[SiGe Semiconductor, Inc.]
|
| TGA4805-EPU |
10GB/s Differential Transimpedance Amplifier
10 GB/s Differential Transimpedance Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| KB8825 |
1.1GHZ DUAL PLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NE600 |
1GHz LNA and mixer
|
Philips Semiconductors
|
